Prof Peter Asbeck

Bio:

Peter M. Asbeck received the B.S. and Ph.D. degrees in electrical engineering from the Massachusetts Institute of Technology, Cambridge, in 1969 and 1975, respectively.
      In 1978, he joined Rockwell International Science Center , where he was involved in the development of high speed devices and circuits based on III-V compounds and heterojunctions. He investigated the influence of GaAs substrates on the behavior of field-effect transistors. He pioneered the development of heterojunction bipolar transistors based on GaAlAs/GaAs and InAlAs/InGaAs material systems and has contributed widely in the areas of physics, fabrication, and circuit applications of these devices. In 1991, he becaume Principal Scientist of the High Speed Electronics and Optoelectronics Function at the Science Center. Dr. Asbeck was a recipient of Rockwell's 1985 "Engineer of the Year" award.
      In 1991, he joined the University of California at San Diego as Professor in the Electrical and Computer Engineering Department. Most current research topics focus on alternate high speed and high power devices and applications in III-V (including Nitrides), Silicon, and alternate materials. Some projects include the development of novel HBT and HFET devices, Silicon on Sapphire (SOS) technologies, power amplifier architectures and characterization, and opto-electronic interface circuits.

Contact:asbeck@ece.ucsd.edu